Time dependence power laws of hot carrier degradation in SOI MOSFETS
Time dependence power laws of hot carrier degradation in SOI MOSFETS
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SOI MOSFET 中热载流子退化的时间依赖性幂律
DOI：
10.1109/soi.1996.552472
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
H. Hughes
中科院分区：
文献类型：
--
作者：
S. Sinha;F. Duan;D. Ioannou;W. Jenkins;H. Hughes
SOI MOSFET中基于相反沟道的电荷注入现象提供了一个强大的工具，因为它首次使在常规工作MOSFET中仅注入空穴或仅注入电子成为可能。本文将对沟道热载流子注入与电荷泵测量相结合，研究了纯热电子/空穴注入的影响。n沟道器件用于纯空穴注入实验，p沟道器件用于电子注入实验。结果表明，纯空穴和纯电子的注入都导致界面态的产生服从时间幂律。基于这些和其他结果，得出的结论是注入脉冲的纯度负责的时间幂律，无论是空穴或电子注入。相比之下，当应用双极注入（空穴和电子的混合物）时，我们的结果显示出熟悉的模式。
The opposite channel based charge injection phenomenon in SOI MOSFETs provides a powerful tool, as it makes it possible for the first time to inject only holes or only electrons in regular, working MOSFETs. In this paper opposite channel based hot carrier injection has been combined with charge pumping measurements and the effects of pure hot electron/hole injection were investigated. n channel devices were used for the pure hole injection experiments, and p channel ones for the electron injection. The results demonstrate that both pure hole and pure electron injection give rise to interface state generation obeying a time power law. Based on these and other results, a conclusion is drawn that the purity of the injection pulse is responsible for the time power law, regardless of whether holes or electrons are injected. In contrast, when bipolar injection (mixture of holes and electrons) was applied, our results showed a familiar pattern.