Pulsed-Laser-Deposited YMnO3 Epitaxial Films with Square Polarization-Electric Field Hysteresis Loop and Low-Temperature Growth
Pulsed-Laser-Deposited YMnO3 Epitaxial Films with Square Polarization-Electric Field Hysteresis Loop and Low-Temperature Growth
复制标题
DOI：
10.1143/jjap.43.6613
复制
发表时间：
2004-09
影响因子：
1.5
通讯作者：
N. Shigemitsu;H. Sakata;D. Ito;T. Yoshimura;A. Ashida;N. Fujimura
中科院分区：
文献类型：
--
作者：
N. Shigemitsu;H. Sakata;D. Ito;T. Yoshimura;A. Ashida;N. Fujimura
采用脉冲激光沉积法（PLD）在（111）Pt/（0001）蓝宝石衬底上制备了YMnO 3薄膜。关于沉积条件的系统研究表明，YMnO 3外延膜的组成的变化取决于沉积温度和周期，由于在沉积过程中从目标和/或膜表面的Mn的蒸发。为了克服这个问题，尝试了低温生长、提高靶密度和改变衬底加热系统。为了增强光子烧蚀，将用于烧蚀的准分子激光从KrF（248 nm）改变为ArF（193 nm）。最终，在740°C下沉积的YMnO 3薄膜的铁电性显著提高。此外，即使在700°C下也成功地获得了具有几乎相同铁电性能的YMnO 3薄膜。
YMnO3 films were prepared by pulsed laser deposition (PLD) on epitaxial (111) Pt/(0001) sapphire substrates. A systematic study regarding the deposition conditions revealed that the composition of the YMnO3 epitaxial films changed depending on deposition temperature and period, due to the evaporation of Mn from the target and/or the film surface during the deposition. To overcome this issue, low-temperature growth, improvement in target density and the change in the substrate heating system were attempted. To enhance photonic ablation, the excimer laser for the ablation was changed from KrF (248 nm) to ArF (193 nm). Eventually, the ferroelectricity of the YMnO3 film deposited at 740°C was significantly improved. Furthermore, the YMnO3 film with almost identical ferroelectric property was successfully obtained even at 700°C.