Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
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DOI：
10.1038/s43246-022-00310-x
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发表时间：
2022-11-14
影响因子：
7.8
通讯作者：
Amiri, Pedram Khalili
中科院分区：
文献类型：
--
作者：
Shao, Yixin;Lopez-Dominguez, Victor;Amiri, Pedram Khalili
基于磁隧道结（MTJ）中的电压控制的磁各向异性的磁随机存取存储器（MRAM）是高性能计算应用的有希望的候选者，这是由于与传统的电流控制的自旋转移矩MRAM相比，其具有更低的功耗、更高的位密度以及减小存取晶体管尺寸的能力。实现这些优点的关键是具有低MTJ开关电压。在这里，我们报告了一个垂直MTJ结构，具有类似于130 fJ/Vm的高电压控制的磁各向异性系数和超过150%的高隧道磁阻。由于高电压控制的磁各向异性系数，我们证明了使用低于1 V的电压，直径为50和70 nm的纳米级MTJ的亚纳秒进动切换。我们还显示了这种切换机制的缩放到30 nm MTJ，研究结果为今后电压-电流互感器的发展和应用奠定了基础。控制MRAM和自旋电子器件在新兴的计算系统。
Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance computing applications, due to its lower power consumption, higher bit density, and the ability to reduce the access transistor size when compared to conventional current-controlled spin-transfer torque MRAM. The key to realizing these advantages is to have a low MTJ switching voltage. Here, we report a perpendicular MTJ structure with a high voltage-controlled magnetic anisotropy coefficient similar to 130 fJ/Vm and high tunnel magnetoresistance exceeding 150%. Owing to the high voltage-controlled magnetic anisotropy coefficient, we demonstrate sub-nanosecond precessional switching of nanoscale MTJs with diameters of 50 and 70 nm, using a voltage lower than 1 V. We also show scaling of this switching mechanism down to 30 nm MTJs, with voltages close to 2 V. The results pave the path for the future development and application of voltage-controlled MRAMs and spintronic devices in emerging computing systems.