Computer simulation of 3-D grain growth using a phase-field model

Computer simulation of 3-D grain growth using a phase-field model
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DOI:
10.1016/s1359-6454(02)00084-8
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发表时间:
2002-07
期刊:
影响因子:
9.4
通讯作者:
C. Krill;Long-Qing Chen
C. Krill;Long-Qing Chen
中科院分区:
材料科学1区
文献类型:
--
作者:
C. Krill;Long-Qing Chen

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采用具有均匀晶界迁移率和能量的理想多晶体相场模型,模拟了三维晶粒生长的动力学和拓扑结构。通过动态晶粒取向重新分配程序,计算算法避免了通过聚结进行的晶粒生长,从而消除了模拟结果对多晶微观结构相场描述中实施的有序参数数量的依赖性。因此,更少的顺序参数值必须计算比以前的配方相场模型,这允许处理模拟细胞足够大,包含统计上显着数量的颗粒。由粗化引起的微观结构的动力学和拓扑性质与通过其他方法模拟3D中的无聚结晶粒生长所获得的性质非常相似。
The kinetics and topology of grain growth in three dimensions are simulated using a phase-field model of an ideal polycrystal with uniform grain-boundary mobilities and energies. Through a dynamic grain-orientation-reassignment routine, the computational algorithm avoids grain growth via coalescence, thus eliminating the dependence of the simulation results on the number of order parameters implemented in the phase-field description of the polycrystalline microstructure. Consequently, far fewer order-parameter values must be computed than in previous formulations of the phase-field model, which permits handling simulation cells large enough to contain a statistically significant number of grains. The kinetic and topological properties of the microstructure induced by coarsening closely resemble those obtained by other methods for simulating coalescence-free grain growth in 3D.