4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics
4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics
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DOI：
10.1038/s41566-019-0556-6
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发表时间：
2020-05-01
期刊：
影响因子：
35
通讯作者：
Vuckovic, Jelena
中科院分区：
文献类型：
--
作者：
Lukin, Daniil M.;Dory, Constantin;Vuckovic, Jelena
光量子信息处理将需要高效的光子电路来连接片上和远距离的量子节点。这需要将光学可寻址的量子比特有效地集成到光子电路中，以及将量子频率转换到电信频段。4H-碳化硅(4H-碳化硅)具有很强的二阶光学非线性，具有丰富的色心，为片上量子光子学提供了独特的潜力。在这里，我们展示了在一个单一的，单片平台的强烈增强发射的颜色中心和有效的光学频率转换。我们开发了一种4H-SiC薄膜的制备工艺，该工艺与工业标准的CMOS纳米加工相兼容。这项工作提供了一条可行的路线，走向工业兼容的、可扩展的基于色心的量子技术，包括芯片上量子光的单片产生和频率转换。采用晶片键合和减薄技术制备了基于碳化硅的单片光电子器件。实验结果表明，色心的单光子发射和光频率转换得到了很强的增强，转换效率为360%W-1。
Optical quantum information processing will require highly efficient photonic circuits to connect quantum nodes on-chip and across long distances. This entails the efficient integration of optically addressable qubits into photonic circuits, as well as quantum frequency conversion to the telecommunications band. 4H-silicon carbide (4H-SiC) offers unique potential for on-chip quantum photonics, as it hosts a variety of promising colour centres and has a strong second-order optical nonlinearity. Here, we demonstrate within a single, monolithic platform the strong enhancement of emission from a colour centre and efficient optical frequency conversion. We develop a fabrication process for thin films of 4H-SiC, which are compatible with industry-standard, CMOS nanofabrication. This work provides a viable route towards industry-compatible, scalable colour-centre-based quantum technologies, including the monolithic generation and frequency conversion of quantum light on-chip. Monolithic photonics devices based on SiC are fabricated by a wafer bonding and thinning technique. The strong enhancement of single-photon emission from a colour centre and optical frequency conversion with an efficiency of 360%W-1 are demonstrated.