282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
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282 nm AlGaN 基深紫外发光二极管在纳米图案蓝宝石衬底上具有改进的性能
DOI：
10.1063/1.4812237
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发表时间：
2013-06-17
影响因子：
4
通讯作者：
Qin, Zhixin
中科院分区：
文献类型：
--
作者：
Dong, Peng;Yan, Jianchang;Qin, Zhixin
我们首先报告AlGaN基深紫外发光二极管（UV-LED）生长在纳米图案化蓝宝石衬底（NPSS）通过纳米球光刻技术制备。由于AlN的纳米尺度横向生长，NPSS上的AlN聚结厚度仅为3 μ m，这也导致AlN及其上外延层中的位错密度较低。在NPSS上，282 nm UV-LED在20 mA时的光输出功率达到3.03mW，外部量子效率为3.45%，比平板蓝宝石上的性能提高了98%。温度依赖的光致发光揭示了这种显着的增强是更高的内部量子效率和更高的光提取效率的组合。(C)2013 AIP Publishing LLC.
We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 mu m due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03mW at 20mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency. (C) 2013 AIP Publishing LLC.