Silicon-Germanium multi-quantum well photodetectors in the near infrared
Silicon-Germanium multi-quantum well photodetectors in the near infrared
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DOI：
10.1364/oe.20.007608
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发表时间：
2012-03-26
期刊：
影响因子：
3.8
通讯作者：
Okyay, Ali K.
中科院分区：
文献类型：
--
作者：
Onaran, Efe;Onbasli, M. Cengiz;Okyay, Ali K.
在硅衬底上外延生长了单晶硅-锗多量子井层。利用最新开发的MHAH外延技术，在高水平的控制下获得了非常高质量的薄膜。MHAH生长技术促进了调制器和光电探测器等光子功能与低成本硅VLSI技术的单片集成。制备的台面结构p-i-n光电探测器的反向漏电流接近10 mA/cm(2)，响应度超过0.1A/W，并且其光谱响应度可以通过外加电压进行调节。(C)2012年美国光学学会
Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of similar to 10 mA/cm(2) and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. (C)2012 Optical Society of America