Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence
Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence
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GaAs/GaAlAs 垂直腔表面发射激光器结构的表面光电压光谱表征：角度依赖性
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
F. Pollak
中科院分区：
文献类型：
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作者：
J. Liang;Ying;C. Tien;Y. Chang;C. Chen;N. Li;Pei;F. Pollak
在室温下，对波长接近850 nm的GaAs/ gaalas基垂直腔面发射激光器（VCSEL）结构进行了角依赖性表面光电压光谱（SPS）研究。为了比较，我们还测量了与角度相关的反射率(R)。表面光电压谱显示了向重空穴（1C-1H）激子跃迁的基本传导和腔模式以及与反射镜堆叠特性相关的额外干涉特征，而在R谱中，只有腔模式和干涉特征清晰可见。激子特征的能量位置不依赖于入射角，而空腔模式的能量位置依赖于入射角可以用一个简单的模型拟合。这项研究证明了角相关SPS在室温下对VCSEL结构进行非接触和无损表征的巨大潜力。
An angle-dependent surface photovoltage spectroscopy (SPS) study has been performed at room temperature on a GaAs/GaAlAs-based vertical-cavity-surface-emitting-laser (VCSEL) structure emitting at a wavelength near 850 nm. For comparison purposes, we have also measured the angle-dependent reflectance (R). The surface photovoltage spectra exhibit both the fundamental conduction to heavy-hole (1C–1H) excitonic transition and cavity mode plus additional interference features related to the properties of the mirror stacks, whereas in the R spectra only the cavity mode and interference features are clearly visible. The energy position of the excitonic feature is not dependent on the angle of incidence, in contrast to that of the cavity mode, whose angular dependence can be fitted with a simple model. This study demonstrates the considerable potential of angle-dependent SPS for the contactless and nondestructive characterization of VCSEL structures at room temperature.