Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose
Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose
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伽马辐照 p 沟道 6H-SiC MOSFET 的性能：高总剂量
DOI：
10.1109/tns.2002.807853
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发表时间：
2003
影响因子：
1.8
通讯作者：
H. Itoh
中科院分区：
文献类型：
--
作者：
K. K. Lee;T. Ohshima;H. Itoh
我们首次观察到伽马射线照射对增强型 6H-SiC p 沟道 MOSFET 的总剂量效应。通过测量漏极-源极电流 (I/sub ds/) 作为栅极电压 (V/sub g/) 和漏极-源极电压 (V/sub ds/) 的函数，在总剂量达到 10/sup 8/ rad (SiO/sub 2/) 的辐照前后对这些晶体管进行电气表征。这些晶体管与 6H-SiC n 沟道 MOSFET 进行了比较。 p 沟道器件在高达 10/sup 6/ rad (SiO/sub 2/) 的情况下仍能保持完整功能，而 n 沟道器件则在 10/sup 8/ rad (SiO/sub 2/) 时仍能保持完整功能。我们发现n沟道晶体管中辐射引起的界面态的产生明显低于p沟道器件。
We present the first observation of total dose effects of gamma-ray irradiation on enhancement mode 6H-SiC p-channel MOSFETs. The electrical characterization of these transistors was performed before and after irradiation up to a total dose of 10/sup 8/ rad (SiO/sub 2/) by measuring the drain-source current (I/sub ds/) as a function of gate voltage (V/sub g/) and drain-source voltage (V/sub ds/). These transistors were compared to 6H-SiC n-channel MOSFETs. The p-channel devices remain fully functional up to 10/sup 6/ rad (SiO/sub 2/), while the n-channel devices are fully functional through 10/sup 8/ rad (SiO/sub 2/). We found that the generation of radiation-induced interface states in the n-channel transistors is substantially lower than that of the p-channel devices.