Trapping parameters of dangling bonds in hydrogenated amorphous silicon
Trapping parameters of dangling bonds in hydrogenated amorphous silicon
复制标题
氢化非晶硅中悬挂键的捕获参数
DOI：
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发表时间：
1982
期刊：
影响因子：
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通讯作者：
R. Street
中科院分区：
文献类型：
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作者：
R. Street
使用飞行时间瞬态光电导测量了a-Si：H中悬空键缺陷处电子和空穴的迁移率、寿命和捕获截面。电子和空穴的乘积μτNs的大小分别为3.5×108±25% cm−1 V−1和4×107±50% cm−1 V−1。电子的俘获截面为4×10−15 cm 2，空穴的俘获截面为2×10−15 cm 2。结果与中性悬挂键的两性性质一致。
The mobility, lifetime, and capture cross sections for the trapping of electrons and holes at dangling bond defects in a‐Si:H are measured using time‐of‐flight transient photoconductivity. The magnitude obtained for the product μτNs is 3.5×108±25% cm−1 V−1 and 4×107±50% cm−1 V−1 for electrons and holes, respectively. The capture cross section is 4×10−15 cm2 for electrons and about 2×10−15 cm2 for holes. The results are consistent with the amphoteric nature of neutral dangling bonds.