Depth profile study on Ti/Al bilayer Ohmic contacts to AlGaN/GaN
Depth profile study on Ti/Al bilayer Ohmic contacts to AlGaN/GaN
复制标题
Ti/Al 双层与 AlGaN/GaN 欧姆接触的深度剖面研究
DOI：
10.1016/j.matpr.2021.03.268
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
E. Ayyildiz
中科院分区：
文献类型：
--
作者：
A. Akkaya;E. Ayyildiz
双层欧姆接触的电性能不仅取决于层厚、退火温度和退火时间等，而且还取决于欧姆接触金属以及欧姆接触金属与衬底和欧姆接触金属之间的反应。此外，欧姆接触金属的氧化倾向对于接触质量和稳定性非常重要。在这项研究中，我们研究了Ti/Al欧姆接触形成在未掺杂的AlGaN衬底上的X射线光电子能谱（XPS）的深度分布分析。我们的目的是揭示金属的氧化物和反应产物以及对接触深度的依赖性。在测量模式和深度剖面模式下观察到五个原子的芯能级（Ga_（3d），Al_（2 p），N_（1 s），Ti_（2 p）和O_（1 s）），并将XPS芯能级峰与高斯剖面进行卷积以确定峰的来源。我们的研究结果表明，欧姆接触金属强烈地与氧结合，导致高的比接触电阻率（ρs）由TLM测量证实。热处理使Ti/Al界面形成了TiAl 3金属合金，过量Ga和TiN的存在表明N原子在金属半导体（MS）界面向外扩散。
The electrical performance of double layered Ohmic contacts not only depends on layer thicknesses, annealing temperatures and annealing time etc. but also Ohmic contact metals and reactions with substrates and each other. Furthermore, oxidation tendency of Ohmic contact metals is highly important for contact quality and stability. In this study, we have investigated Ti/Al Ohmic contact formation on undoped AlGaN substrates by X-ray photoelectron spectroscopy (XPS) depth profile analysis. We aimed to reveal the oxide compounds and reaction products of metals and dependencies to the contact depth. In survey mode and depth profile mode five atoms core level (Ga3d, Al2p, N1 s, Ti2pand O1 s) was observed and the XPS core level peaks were convoluted with Gaussian profiles to identify the origin of the peaks. Our results show that Ohmic contact metals strongly incorporated with oxygen, leading to high specific contact resistivity (ρs) confirmed by the TLM measurement. Also it is found that thermal treatments cause a TiAl3metallic alloy in the Ti/Al interface and the presence of excess Ga and TiN indicates that out diffusion of N atoms at the metal semiconductor (MS) interface.
S. Shikii 等：“使用飞秒激光脉冲激发的太赫兹辐射观察 Yba_2-Cu_3O_<7-8> 薄膜中的超电流分布”Appl。
DOI：
--
发表时间：
--
期刊：
影响因子：
--
作者：
通讯作者：
--