Feasibility of conversion electron spectrometry using a Peltier-cooled silicon drift detector
Feasibility of conversion electron spectrometry using a Peltier-cooled silicon drift detector
复制标题
使用珀耳帖冷却硅漂移探测器进行转换电子能谱测定的可行性
DOI：
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发表时间：
2013
影响因子：
1.6
通讯作者：
H. Toivonen
中科院分区：
文献类型：
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作者：
K. Peräjärvi;J. Turunen;S. Ihantola;V. Kämäräinen;S. Pommé;R. Pöllänen;T. Siiskonen;H. Sipilä;H. Toivonen
Peltier致冷硅漂移探测器已成功地应用于转换电子能谱。探测器对45 keV电子的能量分辨率为0.50 keV（FWHM）。死层的近似厚度被确定为140 ± 20 nm Si当量。在17-75 keV的能量范围内，探测器的相对效率被验证为近似恒定。这与薄死层的高透明度和探测器的足够厚度（450 μm）相一致，以阻止电子。该探测器适用于化学制备样品的钚分析。此外，它被证明，转换电子光谱法是优于α光谱法在保持其能力，以确定240钚/239钚同位素比作为样品厚度的函数。所研究的测量技术可以被认为是保障措施中一种有前途的新工具，是对现有方法的补充。
A Peltier-cooled silicon drift detector was successfully applied for conversion electron spectrometry. The energy resolution of the detector for 45 keV electrons was 0.50 keV (FWHM). The approximate thickness of the dead layer was determined to be 140 ± 20 nm Si equivalent. The relative efficiency of the detector was verified to be approximately constant in the energy range of 17–75 keV. This is concordant with the high transparency of the thin dead layer and the sufficient thickness of the detector (450 μm) to stop the electrons. The detector is suitable for use in plutonium analysis of chemically prepared samples. Moreover, it was demonstrated that conversion electron spectrometry is better than alpha spectrometry in preserving its capability to determine the 240Pu/239Pu isotopic ratio as a function of sample thickness. The investigated measurement technique can be considered a promising new tool in safeguards, complementary to existing methods.