A high-quality round-shaped monolayer MoS2 domain and its transformation
A high-quality round-shaped monolayer MoS2 domain and its transformation
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高质量圆形单层MoS2畴及其转化
DOI：
10.1039/c5nr05701a
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发表时间：
2016
期刊：
影响因子：
6.7
通讯作者：
Deren Yang
中科院分区：
文献类型：
--
作者：
Shuang Xie;Mingsheng Xu;Tao Liang;Guowei Huang;Shengping Wang;Guobiao Xue;Nan Meng;Yang Xu;Hongzheng Chen;Xiangyang Ma;Deren Yang
MoS2广泛应用于自旋谷电子学、逻辑晶体管、发光器件、清洁能源和生物等领域。然而，二维二硫化钼片的可控合成仍然是一个巨大的挑战。我们报告了圆形单层二硫化钼域的形成与可调的大小和从三角形到圆形的形状转换。的形成机制的定性解释和过程可以控制由热力学或动力学生长制度取决于生长速率。圆形MoS2畴显示出1.39 cm2 V−1 s−1的高电子迁移率，与机械剥离的对应物相当。我们的研究揭示了影响MoS2合成的主导因素，并提高了我们对MoS2成核和生长机制的理解，从而对MoS2和其他TMD的合成进行精细控制。
MoS2 is widely used in many fields including spin-valleytronics, logic transistors, light emitting devices, clean energy and biology. However, controllable synthesis of two-dimensional MoS2 sheets remains a great challenge. We report the formation of round-shaped monolayer MoS2 domains with a tunable size and the shape transformation from triangle to round. A qualitative interpretation of the formation mechanism is presented and the process can be controlled by either a thermodynamic or a kinetic growth regime depending on the growth rate. The round-shaped MoS2 domains show a high electron mobility of 1.39 cm2 V−1 s−1, comparable to the mechanically exfoliated counterparts. Our study reveals the dominant factors that influence the synthesis of MoS2 and improves our understanding of the nucleation and growth mechanisms of MoS2, towards fine control over the synthesis of MoS2 and other TMDs.