Fabrication and characterization of bismuth–telluride-based alloy thin film thermoelectric generators by flash evaporation method

Fabrication and characterization of bismuth–telluride-based alloy thin film thermoelectric generators by flash evaporation method
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DOI:
10.1016/j.sna.2007.05.030
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发表时间:
2007-08
影响因子:
4.6
通讯作者:
M. Takashiri;T. Shirakawa;K. Miyazaki;H. Tsukamoto
M. Takashiri;T. Shirakawa;K. Miyazaki;H. Tsukamoto
中科院分区:
工程技术3区
文献类型:
--
作者:
M. Takashiri;T. Shirakawa;K. Miyazaki;H. Tsukamoto

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采用闪蒸法制备碲化铋基合金薄膜热电发电机。我们制备了Bi0.4Te3.0Sb1.6(p型)和Bi2.0Te2.7Se0.3(n型)粉末用于制备闪蒸薄膜。薄膜热电发电机的整体尺寸为 20 毫米 x 15 毫米,由七对通过铝电极连接的腿组成。每条腿长15毫米,宽1毫米,厚1微米。我们测量输出电压并估计室温附近的最大输出功率,作为薄膜热电发电机热端和冷端之间温差的函数。为了提高发电机的性能,在25°C至250°C的多个温度下进行氢气退火工艺。当氢气退火温度Ta=250℃、温差ΔT=30K时,得到最高输出电压83.3mV,预计输出功率0.21μW。 Ta=250℃的氢气退火温度也使p型薄膜(塞贝克系数=254.4μV/K,电阻率=4.1mΩcm,功率因数=15.9μW/cmK2)和n型薄膜(−179.3μV/K,1.5mΩcm,21.5μW/cmK2)获得最佳的电性能。
Bismuth–telluride-based alloy thin film thermoelectric generators are fabricated by a flash evaporation method. We prepare Bi0.4Te3.0Sb1.6(p-type) and Bi2.0Te2.7Se0.3(n-type) powders for the fabrication of the flash evaporated thin films. The overall size of the thin film thermoelectric generators, which consist of seven pairs of legs connected by aluminum electrodes, is 20mm by 15mm. Each leg is 15mm long, 1mm wide and 1μm thick. We measure the output voltage and estimate the maximum output power near room temperature as a function of the temperature difference between hot and cold junctions of the thin film thermoelectric generators. In order to improve the performance of the generators, a hydrogen annealing process is carried out at several temperatures from 25°C to 250°C. The highest output voltage of 83.3mV and estimated output power of 0.21μW are obtained from a hydrogen annealing temperature of Ta=250°C and a temperature difference of ΔT=30K. The hydrogen annealing temperature of Ta=250°C also results in the best electrical performance for both p-type thin film (Seebeck coefficient=254.4μV/K, resistivity=4.1mΩcm, power factor=15.9μW/cmK2) and n-type thin film (−179.3μV/K, 1.5mΩcm, 21.5μW/cmK2).