Discrete dislocation simulation of nanoindentation
Discrete dislocation simulation of nanoindentation
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DOI：
10.1007/s00466-003-0531-3
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发表时间：
2004-03
影响因子：
4.1
通讯作者：
H. Kreuzer;R. Pippan
中科院分区：
文献类型：
--
作者：
H. Kreuzer;R. Pippan
提出了一种用离散位错描述纳米压痕的方法。采用配置法计算每个压痕阶段产生的接触应力，从而实现任意形状的压头。当局部剪切应力达到发射的临界值时，允许分布的位错源在预定的滑移面上发射位错。在每个压痕步骤之后，在接触应力和位错所产生的应力的影响下，新发射的位错被带到它们的平衡位置。作为模型的应用，我们将详细研究具有不同位错源密度的两种材料的塑性行为。
A methodology to describe nanoindentation by means of discrete dislocations is presented. A collocation method is used to calculate the arising contact stresses at each indentation step, which permits to realize an arbitrary shape of the indenter. Distributed dislocation sources are allowed to emit dislocations on predefined slip planes, when the critical value of the local shear stress for the emission is reached. After each indentation step, the newly emitted dislocations are brought to their equilibrium positions under the influence of the stresses induced by the contact stresses and the dislocations. As an application of our model, the plastic behavior of two materials with different densities of dislocation sources will be studied in detail.