Photoemission study of the poly(3-hexylthiophene)/Au interface
Photoemission study of the poly(3-hexylthiophene)/Au interface
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聚(3-己基噻吩)/Au界面的光电子研究
DOI：
10.1063/1.2208267
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发表时间：
2006
影响因子：
4
通讯作者：
S. Jenekhe
中科院分区：
文献类型：
--
作者：
J. E. Lyon;A. Cascio;M. Beerbom;R. Schlaf;Y. Zhu;S. Jenekhe
使用光电子能谱研究了共轭聚合物聚（3-己基噻吩）（P3HT）和金之间的界面。电喷雾薄膜沉积用于在不破坏真空的情况下分几个步骤在多晶金薄膜上沉积 P3HT。在沉积步骤之间，进行X射线光电子能谱和紫外光电子能谱测量。由此产生的一系列光谱可以确定界面处的轨道排列。结果表明，P3HT 界面比同等结构的低聚噻吩接触具有更小的空穴注入势垒 (0.59eV)。
The interface between the conjugated polymer poly(3-hexylthiophene) (P3HT) and Au was investigated using photoemission spectroscopy. Electrospray thin film deposition was used to deposit P3HT on a polycrystalline Au thin film in several steps without breaking the vacuum. In between deposition steps, x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy measurements were carried out. The resulting series of spectra allowed the determination of the orbital lineup at the interface. The results indicate that the P3HT interface has a smaller hole injection barrier (0.59eV) than comparably structured oligothiophene contacts.