Synthesis and novel properties of Q-silicon (January 2023)
Synthesis and novel properties of Q-silicon (January 2023)
复制标题
Q-硅的合成和新特性（2023年1月）
DOI：
10.1080/21663831.2023.2224396
复制
发表时间：
2023
影响因子：
8.3
通讯作者：
Narayan, Roger
中科院分区：
文献类型：
--
作者：
Narayan, Jagdish;Sundar Sahoo, Siba;Joshi, Naveen;Narayan, Roger
我们报告的Q-硅的原子密度比晶体硅高60%，同时保持键合特性与正常硅相同的发现。当一个、两个或三个四面体随机堆积时，产生不同的非晶相，并且当子单元沿具有交替孔的沿着方向排列时，形成Q-硅的结晶相<110>。纳秒激光熔化过冷状态下的非晶硅和淬火已经产生了与硅的抗磁性相比具有鲁棒铁磁性的Q-硅。Q硅的阻塞温度估计超过400 K，从而为基于自旋的计算和原子级存储开辟了新的前沿。
We report the discovery of Q-silicon with an atomic density of 60% higher than crystalline silicon while keeping the bonding characteristics the same as normal silicon. Distinct amorphous phases are created, when one, two, or three tetrahedra are randomly packed, and a crystalline phase of Q-silicon is formed when subunit cells are arranged along <110> directions with alternate holes. Nanosecond laser melting of amorphous silicon in an undercooled state and quenching have created Q-silicon with robust ferromagnetism compared to the diamagnetism of silicon. The blocking temperature of Q-silicon is estimated to be over 400 K, thus opening a new frontier for spin-based computing and atomic-level storage.