Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design
Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design
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DOI：
10.1364/oe.25.002627
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发表时间：
2017-02-06
期刊：
影响因子：
3.8
通讯作者：
Leuthold, Juerg
中科院分区：
文献类型：
--
作者：
Heni, Wolfgang;Haffner, Christian;Leuthold, Juerg
研究了纳米缝隙中引入高度非线性有机电光(EO)材料的性能。结果表明，在150 nm宽的等离子体缝隙波导中可以获得高达190 pm/V的电光系数，但当缝隙较窄时，电光系数减小。讨论了导致这种下降的可能机制。进行了蒙特卡罗计算机模拟，证实了生色团表面相互作用是影响等离子体窄缝中电光系数的一个重要因素。这些高度非线性的材料在光调制器中的应用尤其令人感兴趣。然而，在调制器中，关键参数是电压长度乘积U pi L和插入损耗，而不是线性电光系数。对于材料JRD1和DLD164，我们分别展示了槽宽为50 nm的创纪录的低电压长度产品70V微米和50V微米。这是因为在窄缝中增强了非线性相互作用，从而补偿了减小的电光系数。同样，发现缝隙宽度在60到100 nm范围内的插入损耗最低。(C)2017年美国光学学会。
The performance of highly nonlinear organic electro-optic (EO) materials incorporated into nanoscale slots is examined. It is shown that EO coefficients as large as 190 pm/V can be obtained in 150 nm wide plasmonic slot waveguides but that the coefficients decrease for narrower slots. Possible mechanism that lead to such a decrease are discussed. Monte-Carlo computer simulations are performed, confirming that chromophore surface interactions are one important factor influencing the EO coefficient in narrow plasmonic slots. These highly nonlinear materials are of particular interest for applications in optical modulators. However, in modulators the key parameters are the voltage-length product U pi L and the insertion loss rather than the linear EO coefficients. We show record-low voltage-length products of 70 V mu m and 50 V mu m for slot widths in the order of 50 nm for the materials JRD1 and DLD164, respectively. This is because the nonlinear interaction is enhanced in narrow slot and thereby compensates for the reduced EO coefficient. Likewise, it is found that lowest insertion losses are observed for slot widths in the range 60 to 100 nm. (C) 2017 Optical Society of America.