High-Response Identifiable Gas Sensor Based on a Gas-Dielectric ZnPc Nanobelt FET
High-Response Identifiable Gas Sensor Based on a Gas-Dielectric ZnPc Nanobelt FET
复制标题
基于气体电介质 ZnPc 纳米带 FET 的高响应可识别气体传感器
DOI：
10.1109/led.2017.2749445
复制
发表时间：
2017-11-01
影响因子：
4.9
通讯作者：
Liu, Yichun
中科院分区：
文献类型：
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作者：
Song, Zhiqi;Tang, Qingxin;Liu, Yichun
有机半导体气敏传感器由于其固有的优点，特别是良好的灵敏度和选择性，近年来引起了人们的广泛关注。然而，具有高灵敏度的气体种类识别仍然是有机气体传感器的关键课题。在此，制备了具有气体介质的ZnPc单纳米带场效应晶体管，并在室温下表现出优异的气敏性能。该传感器对NO2<sub>和H2S</sub>的灵敏度分别为220%~ 10 ppm和3566%~ 20 ppm，对<sub>NO2</sub>/H2S的检测下限为50 ppb，超过了现有的室温有机<sub>NO2</sub>/<sub>H2S</sub>传感器。<sub></sub><sub></sub>在LDA特征空间中，实现了对NO2、<sub>SO2</sub>和<sub>H2S</sub><sub></sub>
Gas sensors based on organic semiconductor have recently attracted much attention due to their inherent advantages, especially excellent flexibility and good selectivity. However, the gas species identification with high sensing response remains a key subject for organic gas sensors. Herein, a ZnPc single nanobelt field-effect transistor with the gas dielectric was fabricated and exhibited excellent gas sensing performance at room temperature. The sensors show the high response with 220% to 10 ppm NO<sub>2</sub> and 3566% to 20 ppm H<sub>2</sub>S, and the low detection limit down to 50 ppb towards NO<sub>2</sub>/H<sub>2</sub>S, which surpass most reported room-temperature organic-based NO<sub>2</sub>/H<sub>2</sub>S sensors. Further, our single device realized accurate gas selective identification among NO<sub>2</sub>, SO<sub>2</sub> and H<sub>2</sub>S with 92% success ratio in LDA feature space.