Microstructure development during the thermal oxidation of silicon in chlorine containing ambients
Microstructure development during the thermal oxidation of silicon in chlorine containing ambients
复制标题
硅在含氯环境中热氧化过程中的微观结构发展
DOI：
10.1016/0022-3093(82)90119-3
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发表时间：
1982
影响因子：
3.5
通讯作者：
R. E. Tressler
中科院分区：
文献类型：
--
作者：
M. Monkowski;J. Monkowski;I. Tsong;J. Stach;R. E. Tressler
在含有氧和氯或氧和氯化氢的气氛中，硅的热氧化过程中，硅与其氧化物之间形成界面相。此外，氯还被结合到界面附近的氧化物中。进一步氧化时，界面上会形成气相，在氧化物下面产生气泡。更长时间的氧化会导致从气泡顶部生长出“钟乳石”结构。我们讨论了这些观察结果，并提出了一个模型，根据氯和氧通过氧化物的活性和扩散系数来解释它们的出现。
During the thermal oxidation of silicon in atmospheres containing oxygen and chlorine or oxygen and hydrogen chloride, an interfacial phase is formed between the silicon and its oxide. In addition, chlorine is incorporated into the oxide near the interface. Upon further oxidation a gas phase develops at the interface producing bubbles under the oxide. Still longer oxidation results in the growth of “stalactite” structures from the roof of the bubbles.We discuss these observations and present a model that accounts for their appearance in terms of the activities and diffusivities of chlorine and oxygen through the oxide.