Site-controlled InGaAs quantum dots with tunable emission energy.
Site-controlled InGaAs quantum dots with tunable emission energy.
复制标题
具有可调发射能量的位点控制 InGaAs 量子点。
作者：
M. Felici;P. Gallo;A. Mohan;B. Dwir;A. Rudra;E. Kapon
半导体量子点（QD）系统提供完美的位置控制和可调谐的发射能量，对于涉及点与光学腔的空间和光谱匹配的许多纳米光子器件应用是必不可少的。本文报道了用有机金属化学气相沉积法在具有金字塔形凹陷图案的衬底上生长的有序InGaAs/GaAs量子点的性质。在每个金字塔内部的单个QD的接种生长导致QD位置的近乎完美（<10 nm）的控制。此外，从这种点的有序阵列中观察到有效和均匀的光致发光（不均匀加宽<10 meV）。QD发射能量可以通过改变1）金字塔尺寸和2）其在特定图案内的位置来微调。这种可调谐性是由衬底的化学性质和表面曲率特征的图案化引起的，这允许局部控制决定QD厚度和组成的吸附原子通量。
Semiconductor quantum-dot (QD) systems offering perfect site control and tunable emission energy are essential for numerous nanophotonic device applications involving spatial and spectral matching of dots with optical cavities. Herein, the properties of ordered InGaAs/GaAs QDs grown by organometallic chemical vapor deposition on substrates patterned with pyramidal recesses are reported. The seeded growth of a single QD inside each pyramid results in near-perfect (<10 nm) control of the QD position. Moreover, efficient and uniform photoluminescence (inhomogeneous broadening <10 meV) is observed from ordered arrays of such dots. The QD emission energy can be finely tuned by varying 1) the pyramid size and 2) its position within specific patterns. This tunability is brought about by the patterning of both the chemical properties and the surface curvature features of the substrate, which allows local control of the adatom fluxes that determine the QD thickness and composition.