Steering of a sub-GeV electron beam through planar channeling enhanced by rechanneling.
Steering of a sub-GeV electron beam through planar channeling enhanced by rechanneling.
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DOI：
10.1103/physrevlett.112.135503
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发表时间：
2014-04
影响因子：
8.6
通讯作者：
A. Mazzolari;E. Bagli;L. Bandiera;V. Guidi;H. Backe;W. Lauth;V. Tikhomirov;A. Berra;D. Lietti;M. Prest;E. Vallazza;D. Salvador
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文献类型：
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作者：
A. Mazzolari;E. Bagli;L. Bandiera;V. Guidi;H. Backe;W. Lauth;V. Tikhomirov;A. Berra;D. Lietti;M. Prest;E. Vallazza;D. Salvador
本文报道了在MAMI（美因策尔微加速器）设备上，利用弯曲硅晶体中的平面通道和体积反射，观察到855 MeV电子束的有效转向。在30.5 μm厚的（211）取向Si板上进行弯曲，使（111）晶面发生准镶嵌变形，用于与电子束的相干相互作用。实验结果与几年前记录的能量高于100 GeV的结果类似，这是迄今为止唯一可比较的研究。蒙特卡罗模拟表明，再通道在粒子动力学中起着相当大的作用，并阻碍了通道粒子的破坏。这些结果可以更好地理解在亚gev能量范围内弯曲硅晶体中受相干相互作用影响的电子动力学，这与实现基于周期性弯曲晶体通道的创新x射线源有关。
We report the observation of efficient steering of a 855 MeV electron beam at MAMI (MAinzer MIkrotron) facilities by means of planar channeling and volume reflection in a bent silicon crystal. A 30.5 μm thick plate of (211) oriented Si was bent to cause quasimosaic deformation of the (111) crystallographic planes, which were used for coherent interaction with the electron beam. The experimental results are analogous to those recorded some years ago at energy higher than 100 GeV, which is the only comparable study to date. Monte Carlo simulations demonstrated that rechanneling plays a considerable role in a particle's dynamics and hinders the spoiling of channeled particles. These results allow a better understanding of the dynamics of electrons subject to coherent interactions in a bent silicon crystal in the sub-GeV energy range, which is relevant for realization of innovative x-ray sources based on channeling in periodically bent crystals.