An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma
An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma
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使用常压 VHF 等离子体在低温下原子控制的 Si 薄膜形成工艺
DOI：
10.1088/0953-8984/23/39/394205
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Y. Oshikane and M. Nakano
中科院分区：
文献类型：
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作者：
K. Yasutake;H. Kakiuchi;H. Ohmi;K. Inagaki;Y. Oshikane and M. Nakano
为了生长具有原子级和电子级完美性的外延Si膜，通常采用高温化学气相沉积（CVD）工艺（> 1000 ℃）。为了将生长温度降低到600 ℃以下但保持高沉积速率，需要除热加热之外的其他能源。大气压等离子体化学气相沉积（AP-PCVD）由于其自由基密度高，离子与中性原子碰撞频率高，对膜表面的离子轰击少，被认为适合于在高沉积速率下制备高质量的薄膜。本研究着重于外延硅的低温生长，实验表明，AP-PCVD是能够生长外延硅薄膜与高完整性适用于半导体器件。结果表明，生长前用H2 AP等离子体对Si表面进行清洗是生长高纯Si薄膜的有效方法，而在生长过程中将薄膜生长表面暴露于AP等离子体中对形成无颗粒、无缺陷的Si薄膜具有重要意义。从实验结果和表面原子反应的第一性原理分子动力学模拟，可以提到的是，在AP等离子体中的H原子和具有热动能的高密度He原子都有助于通过向表面提供相当大的能量来降低生长温度。
To grow epitaxial Si films with atomic-and electronic-level perfection, a high-temperature chemical vapor deposition (CVD) process (> 1000 C) has been generally employed. To reduce the growth temperature below 600 C but keeping a high deposition rate, other energy sources than thermal heating are required. Atmospheric pressure plasma CVD (AP-PCVD) is considered to be suitable for fabricating high-quality films at high deposition rates due both to the high radical density and to the low ion bombardment against the film surface, because the collision frequency among ions and neutral atoms is high. The present study focuses on the low-temperature growth of epitaxial Si, and experimentally demonstrates that AP-PCVD is capable of growing epitaxial Si films with high perfection applicable for semiconductor devices. It is found that the pre-growth cleaning of the Si surface by H 2 AP plasma is effective to grow high-purity Si films, and that the exposure of a film-growing surface to AP plasma during growth is important to form particle-free and defect-free Si films. From the experimental results and the first-principles molecular dynamics simulations of surface atomic reactions, it can be mentioned that both H atoms in the AP plasma and high-density He atoms having thermal kinetic energy contribute to the reduction of growth temperature by supplying considerable energy to the surface.