Organic inverter circuits employing ambipolar pentacene field-effect transistors
Organic inverter circuits employing ambipolar pentacene field-effect transistors
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DOI：
10.1063/1.2235947
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发表时间：
2006-07
影响因子：
4
通讯作者：
T. Singh;P. Senkarabacak;N. S. Sariçiftçi;A. Tanda;C. Lackner;R. Hagelauer;G. Horowitz
中科院分区：
文献类型：
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作者：
T. Singh;P. Senkarabacak;N. S. Sariçiftçi;A. Tanda;C. Lackner;R. Hagelauer;G. Horowitz
双双极传输已观察到并五苯薄膜上生长的聚乙烯醇栅极电介质与空穴和电子迁移率为0.3和0.04cm ~ 2 scinVs，分别。以Au作为源极-漏极电极的简单器件结构可以用于在p沟道和n沟道模式下操作晶体管，而不采用低功函数金属电极用于双极电荷注入。利用双极性并五苯场效应晶体管，我们构造了一个电压反相增益为1000的类互补反相器。这些逆变器能够在电压输出到电压输入特性的第一和第三象限两者中操作，这是采用双极晶体管的独特特征。
Ambipolar transport has been observed in pentacene films grown on polyvinyl alcohol gate dielectric with hole and electron mobilities of 0.3 and 0.04cm2∕Vs, respectively. A simple device structure with Au as source-drain electrode can be used to operate a transistor in both p-channel and n-channel modes without employing low work function metal electrodes for ambipolar charge injection. Using ambipolar pentacene field-effect transistors, we construct a complementarylike inverter with voltage inversion gain of ∼10. These inverters are able to operate both in first and third quadrants of the voltage output to voltage input characteristics which is a unique feature of employing ambipolar transistors.