Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens
Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens
复制标题
使用等离子体腔透镜增强半节距 32 nm 和 22 nm 光刻的纵横剖面
DOI：
10.1063/1.4914000
复制
发表时间：
2015-03-02
影响因子：
4
通讯作者：
Luo, Xiangang
中科院分区：
文献类型：
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作者：
Gao, Ping;Yao, Na;Luo, Xiangang
等离子体光刻图形的不良纵横轮廓受到金属膜中的倏逝波散射损耗和光刻胶中的曝光衰减的影响。为了解决这个问题，我们实验报告等离子体腔透镜，以提高等离子体光刻的方面的轮廓和分辨率。半间距（hp）32 nm抗蚀剂图案的剖面深度实验上提高到23 nm，超过了报告的亚10 nm的光致抗蚀剂深度。然后使用硬掩模技术和蚀刻步骤将抗蚀剂图案转移到具有80 nm深度的底部抗蚀剂图案。实验证明等离子体腔透镜的分辨率可达hp 22 nm。等离子体腔透镜的高宽比和高分辨率的提高主要归因于底部银层对倏逝波的放大作用和光滑银膜对散射损耗的降低。此外，利用理论近场曝光模型对等离子体腔透镜的面形进行了计算，很好地说明了这种方法的可行性。
Poor aspect profiles of plasmonic lithography patterns are suffering from evanescent waves' scattering loss in metal films and decaying exposure in photoresist. To address this issue, we experimentally report plasmonic cavity lens to enhance aspect profile and resolution of plasmonic lithography. The profile depth of half-pitch (hp) 32 nm resist patterns is experimentally improved up to 23 nm, exceeding in the reported sub-10 nm photoresist depth. The resist patterns are then transferred to bottom resist patterns with 80 nm depth using hard-mask technology and etching steps. The resolution of plasmonic cavity lens up to hp 22 nm is experimentally demonstrated. The enhancement of the aspect profile and resolution is mainly attributed to evanescent waves amplifying from the bottom silver layer and scattering loss reduction with smooth silver films in plasmonic cavity lens. Further, theoretical near-field exposure model is utilized to evaluate aspect profile with plasmonic cavity lens and well illustrates th...