Fast response H2S gas sensing characteristics with ultra-thin CuO islands on sputtered SnO2
Fast response H2S gas sensing characteristics with ultra-thin CuO islands on sputtered SnO2
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DOI：
10.1016/s0925-4005(03)00226-0
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发表时间：
2003-08-01
影响因子：
8.4
通讯作者：
Sreenivas, K
中科院分区：
文献类型：
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作者：
Chowdhuri, A;Gupta, V;Sreenivas, K
比较了未掺杂SnO 2与两种不同类型的Cu-SnO 2双层薄膜结构的响应特性：（a）SnO 2表面覆盖一层超薄（约10 nm）Cu层，（B）SnO 2表面覆盖一层薄Cu点，并在空气/O-2中退火形成CuO.使用SnO 2膜下方的铂（Pt）叉指电极测量用于感测20-1200 ppm范围内的H2S气体浓度的响应速度。在150 ℃时，CuO岛状SnO_2薄膜的灵敏度为7.4 × 10 ~（3），对20 ppm的H_2S的响应时间为15 s，恢复时间约为118 s。高灵敏度和快速响应被证明主要是由于溢出机制所发挥的主导作用。(C)2003 Elsevier Science B. V.保留所有权利。
Response characteristics of undoped SnO2, are compared with two different types of Cu-SnO2 thin film bilayer structures: (a) SnO2 surface covered by an ultra-thin (similar to10 nm) Cu layer, and (b) SnO2 surface covered with thin Cu dots, and the bilayers were annealed in air/O-2 to form CuO. Response speed for sensing H2S gas concentration in the range 20-1200 ppm was measured using platinum (Pt) inter-digital electrodes underneath the SnO2 film. SnO2 film with CuO dotted islands is found to exhibit a high sensitivity of 7.4 x 10(3) at 150 degreesC, and a fast response time of 15 s to 20 ppm of H2S, and the recovery time is approximately 118 s. The high sensitivity and the fast response are shown to be primarily due to a dominant role played by the spill-over mechanism. (C) 2003 Elsevier Science B.V. All rights reserved.