GaN Comes of Age
GaN Comes of Age
复制标题
GaN 的成熟
DOI：
10.1109/mmm.2010.938583
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发表时间：
2010
影响因子：
3.6
通讯作者：
M. Franco
中科院分区：
文献类型：
--
作者：
A. Katz;M. Franco
GaN现在提供的固态功率放大器的效率、带宽和功率密度比几年前更高。新颖的电路拓扑结构结合GaN的高电压能力和线性化，使GaN高功率放大器能够同时实现线性度和高效率。GaN高功率放大器已生产出超过100 W的功率在多倍频程带宽和PAEs超过60%。窄频带高功率放大器已经生产出PAEs超过90%。
GaN is now providing solid-state power amplifiers of higher efficiency, bandwidth, and power density than could be achieved only a few years ago. Novel circuit topologies combined with GaN's high-voltage capabilities and linearization are allowing GaN high-power amplifiers to simultaneously achieve both linearity and record high efficiency. GaN high-power amplifiers have been produced with more than 100 W of power over multioctave bandwidths and with PAEs of more than 60%. Narrower-band high-power amplifiers have been produced with PAEs of more than 90%.