Photo-induced growth of dielectrics with excimer lamps
Photo-induced growth of dielectrics with excimer lamps
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DOI：
10.1016/s0038-1101(00)00259-8
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发表时间：
2001-08-01
影响因子：
1.7
通讯作者：
Zhang, JY
中科院分区：
文献类型：
--
作者：
Boyd, IW;Zhang, JY
讨论了稀有气体 (Rg) 或 Rg 与卤素混合物中的介质阻挡放电产生的真空紫外 (VUV) 和紫外 (UV) 辐射（准分子灯）的基本原理和特性。与传统光源相比，这些准分子灯可在 108-354 nm 的各种波长范围内提供大面积窄带辐射，具有高效率和高功率密度。可用波长的多样性为材料加工的新工业应用提供了巨大的潜力。此前，已经通过使用准分子灯演示了硅、锗和硅-锗的光氧化以及氧化硅、氮化硅和氮氧化硅的单层和多层膜的光沉积。本文综述了准分子灯辅助光CVD和溶胶-凝胶法生长高介电常数（Ta2O5、TiO2和PZT）和低介电常数（聚酰亚胺和多孔二氧化硅）薄膜的研究进展，总结了Ta2O5薄膜的光致生长特性，并讨论了172 nm辐射低温紫外退火的效果和机理。基于低温下直接在 Si 上生长的光致 Ta2O5 薄膜的金属氧化物半导体电容器表现出优异的电性能。通过光诱导溶胶-凝胶处理和光CVD沉积的生长Ta2O5薄膜在1 MV cm(-1)下的漏电流密度分别低至5.2 x 10(-7) A cm(-2)和2.41 x 10(-7) A cm(-2)，比任何其他技术制备的任何其他生长薄膜低几个数量级，随后的低温通过(400℃)UV退火工序将其提高至10 (-8) A cm (-2)。这些值与之前仅在 600 摄氏度至 1000 摄氏度之间的高温下退火的薄膜所获得的值相当。这些特性使得 Ta2O5 层的光诱导生长成为高密度 DRAM 应用中 SiO2 的合适替代品。 (C) 2001 Elsevier Science Ltd. 保留所有权利。
The underlying principles and properties of vacuum ultraviolet (VUV) and ultraviolet (UV) radiation (excimer lamps), generated by a dielectric barrier discharge in a rare-gas (Rg) or a mixture of Rg and halogen, are discussed. Compared with conventional sources, these excimer lamps offer narrow-band radiation at various wavelengths from 108-354 nm and over large areas with high efficiencies and high power densities. The variety of available wavelengths offers an enormous potential for new industrial applications in materials processing. Previously, photo-oxidation of silicon, germanium and silicon-germanium and photo-deposition of single- and multi-layered films of silicon oxide, silicon nitride, and silicon oxynitride have been demonstrated by using excimer lamps. This paper reviews the progress on excimer lamp-assisted growth of high dielectric constant (Ta2O5, TiO2 and PZT) and low dielectric constant (polyimide and porous silica) thin films by photo-CVD and sol-gel processing, summarizes the properties of photoinduced growth of Ta2O5 films and discusses the effect and mechanism of low temperature UV annealing with 172 nm radiation. Metal oxide semiconductor capacitors based on the photo-induced Ta2O5 films grown directly on Si at low temperatures exhibit excellent electrical properties. Leakage current densities as low as 5.2 x 10(-7) A cm(-2) and 2.41 x 10(-7) A cm(-2) at 1 MV cm(-1) have been achieved for the as-grown Ta2O5 films deposited by photo-induced sol-gel processing and photo-CVD, respectively-several orders of magnitude lower than for any other as-grown films prepared by any other technique, A subsequent low temperature (400 degreesC) UV annealing step improves these to 10(-8) A cm(-2). These values are comparable to those only previously achieved for films annealed at high temperatures between 600 degreesC and 1000 degreesC. These properties make the photo-induced growth of Ta2O5 layers suitable alternative to SiO2 for high density DRAM application. (C) 2001 Elsevier Science Ltd. All rights reserved.