Cu2O-based solar cells using oxide semiconductors
Cu2O-based solar cells using oxide semiconductors
复制标题
DOI：
10.1088/1674-4926/37/1/014002
复制
发表时间：
2016-01-01
影响因子：
5.1
通讯作者：
Miyata, Toshihiro
中科院分区：
文献类型：
--
作者：
Minami, Tadatsugu;Nishi, Yuki;Miyata, Toshihiro
我们描述了使用通过热氧化铜片制备的 p 型 Cu2O 片制造的 Al 掺杂 ZnO (AZO)/n 型氧化物半导体/p 型 Cu2O 异质结太阳能电池中实现的光伏性能的显着改进。使用脉冲激光沉积方法，在各种沉积条件下，在非有意加热的 Cu2O 片上制备了用作 n 型半导体层的多组分氧化物薄膜。在使用各种三元化合物作为n型氧化物薄膜层制造的Cu2O基异质结太阳能电池中，n-ZnGa2O4薄膜层获得了最佳的光伏性能。在大多数使用由各种二元化合物的组合组成的多元氧化物的Cu2O基异质结太阳能电池中，所获得的光伏性能随着化学成分的变化而逐渐变化。然而，对于ZnO-MgO和Ga2O3-Al2O3系统，通过使用相对少量的MgO或Al2O3，例如(ZnO)(0.91)-(MgO)(0.09)和(ZnO)(0.91)-(MgO)(0.09)获得了更高的转换效率(eta)以及高开路电压(V-oc)。分别为(Ga2O3)(0.975)-(Al(2)O(3)d)(0.025)。当使用 Al、Ga、Mg 和 Zn 的金属原子比分别为 10、60、10 和 20 at.% 沉积的 Al2O3-Ga2O3-MgO-ZnO (AGMZO) 多组分氧化物薄膜制备 Cu2O 基异质结太阳能电池时，获得了 0.98 V 的高 V-oc 和 4.82% 的 eta。此外，使用 Na 掺杂 Cu2O (Cu2O:Na) 片制造的 AZO/n 型多组分氧化物/p 型 Cu2O 异质结太阳能电池可以实现增强的 eta 和改善的填充因子，该太阳能电池的电阻率通过优化后退火温度和持续时间进行控制。因此，使用电阻率约为10Ω·cm的Cu2O:Na片和厚度约为60μm的(Ga0.975Al0.025)(2)O-3薄膜制造的MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na异质结太阳能电池获得了6.25%的eta和0.84V的V-oc。纳米。此外，在MgF2/AZO/n-AGMZO/p-Cu2O:Na异质结太阳能电池中获得了0.96V的V-oc和5.4%的eta。
We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (eta) as well as a high open circuit voltage (V-oc)were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)(0.91)-(MgO)(0.09) and (Ga2O3)(0.975)-(Al(2)O(3)d)(0.025), respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high V-oc of 0.98 V and an eta of 4.82% were obtained. In addition, an enhanced eta and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an eta of 6.25% and a V-oc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Omega.cm and a (Ga0.975Al0.025)(2)O-3 thin film with a thickness of approximately 60 nm. In addition, a V-oc of 0.96 V and an eta of 5.4% were obtained in a MgF2/AZO/n-AGMZO/p-Cu2O: Na heterojunction solar cell.