A compact model for tunnel FET for all operation regimes including trap assisted tunneling
A compact model for tunnel FET for all operation regimes including trap assisted tunneling
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适用于所有操作方式（包括陷阱辅助隧道效应）的隧道 FET 紧凑模型
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
D. Antoniadis
中科院分区：
文献类型：
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作者：
R. Sajjad;D. Antoniadis
我们提出了一个严格的紧凑模型，隧道场效应晶体管（TFET），捕捉所有的基本功能，包括陷阱辅助隧穿（达特）源于表面陷阱（Dit）。包含达特准确地捕获了与实验数据匹配良好的亚阈值行为（图1）。通过自洽沟道电势、Cq和漏极注入，我们表明TFET量子电容Cq和Cq受栅极和漏极偏压的控制，导致负漏极偏压的负微分电阻（NDR）（图2）。基于Landauer形式主义的源漏饱和函数Fsd的基础上，得到的有效隧道能量窗口的基础上，还取决于源简并的超线性电流。我们将该模型应用于In0 53Ga0 47As同质结TFET，但该模型是足够一般的用于其他器件结构。该模型可用于评估TFET的性能，在存在不同量的Dit。
We present a rigorous compact model for Tunnel Field Effect Transistors (TFET) that captures all essential features including Trap Assisted Tunneling (TAT) originating from surface traps (Dit). Inclusion of the TAT accurately captures the subthreshold behavior matching well with experimental data (Fig. 1). With self-consistent channel potential, ψ and drain injection, we show that the TFET quantum capacitance, Cq and ψ are controlled by both gate and drain biases resulting in Negative Differential Resistance (NDR) for negative drain bias (Fig 2). A Landauer-formalism-based source-drain saturation function Fsd is derived that obtains the effective tunnel energy window based on ψ and also the superlinear current depending on source degeneracy. We apply the model to an In0 53Ga0 47As homojunction TFET but the model is sufficiently general to use for other device structures. The model can be used to assess TFET performance in presence of different amounts of Dit.