Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
复制标题
DOI：
10.1063/1.3674287
复制
发表时间：
2012-01-02
影响因子：
4
通讯作者：
Yamakoshi, Shigenobu
中科院分区：
文献类型：
--
作者：
Higashiwaki, Masataka;Sasaki, Kohei;Yamakoshi, Shigenobu
我们报告了单晶氧化镓（Ga 2 O3）金属半导体场效应晶体管（MESFETs）的演示。采用分子束外延技术在半绝缘β-Ga 2 O3（010）衬底上生长了Sn掺杂的Ga 2 O3层。我们制作了一个圆形MESFET的栅极长度为4 μ m，源漏间距为20 μ m。该器件表现出由栅极电压（V-GS）摆幅引起的漏极电流调制所表示的理想晶体管动作。当VGS < -20 V时，漏极电流完全夹断，三端截止击穿电压超过250 V。截止时漏极漏电流为3 μ A，导通/截止漏极电流比高达10000。这些器件的早期阶段获得的特性表明，在未来的功率器件应用的Ga 2 O 3基电子器件的巨大潜力。(C)2012年美国物理学会。[doi 10.1063/1.3674287]
We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a semi-insulating beta-Ga2O3 (010) substrate by molecular-beam epitaxy. We fabricated a circular MESFET with a gate length of 4 mu m and a source-drain spacing of 20 mu m. The device showed an ideal transistor action represented by the drain current modulation due to the gate voltage (V-GS) swing. A complete drain current pinch-off characteristic was also obtained for VGS < -20 V, and the three-terminal off-state breakdown voltage was over 250 V. A low drain leakage current of 3 mu A at the off-state led to a high on/off drain current ratio of about 10000. These device characteristics obtained at the early stage indicate the great potential of Ga2O3-based electrical devices for future power device applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3674287]