Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer
Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer
复制标题
选择性氧化增强半导体引导层光隔离器的磁光效应
DOI：
10.1049/el:20010145
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
Y. Nakano
中科院分区：
文献类型：
--
作者：
H. Yokoi;T. Mizumoto;H. Masaki;N. Futakuchi;T. Ohtsuka;Y. Nakano
研究了在InP衬底上生长的AlInAs层的选择性氧化，以期增强具有半导体引导层的光隔离器中的磁光效应。隔离器在磁光波导中以非互反相移工作。带有AlInAs氧化物包层的波导将非互易移相器缩小到几百微米。
Selective oxidation of an AlInAs layer grown on an InP substrate is studied with a view to enhancing the magneto-optic effect in an optical isolator with a semiconductor guiding layer. The isolator operates with a nonreciprocal phase shift in a magneto-optic waveguide. The waveguide with an AlInAs oxide cladding layer miniaturises the nonreciprocal phase shifter to several hundreds of microns.