Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm
Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm
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DOI：
10.1063/1.4931364
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发表时间：
2015-09
影响因子：
4
通讯作者：
K. Merghem;R. Teissier;G. Aubin;A. Monakhov;A. Ramdane;A. Baranov
中科院分区：
文献类型：
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作者：
K. Merghem;R. Teissier;G. Aubin;A. Monakhov;A. Ramdane;A. Baranov
我们展示了 GaSb 基二极管激光器的被动锁模，发射波长为 2.1 μm。研究器件的有源区由两个 10 nm 厚的 GaInSbAs/GaAlSbAs 量子阱组成。被动锁模已在两节激光器中实现，其中一节用作可饱和吸收器。在吸收器电路中测量的 20.6 GHz 微波信号对应于激光谐振器中的基本光子往返频率。在某些工作条件下观察到该信号的线宽低至 ∼10 kHz，表明低相位噪声锁模操作。
We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.