High-voltage accumulation-mode lateral RESURF GaN MOSFETs on SiC substrate
High-voltage accumulation-mode lateral RESURF GaN MOSFETs on SiC substrate
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SiC 衬底上的高压累积模式横向 RESURF GaN MOSFET
DOI：
10.1109/ispsd.2003.1225229
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
R. Gutmann
中科院分区：
文献类型：
--
作者：
K. Matocha;T. P. Chow;R. Gutmann
在导电的6 H-SiC衬底上的AlGaN隔离层上的硅掺杂GaN外延层上制造横向累积模式氮化镓（GaN）MOSFET。多晶硅栅极形成在通过低压化学气相沉积在900/spl deg/C下沉积的100 nm二氧化硅栅极电介质上。积累层场效应迁移率为110 cm/sup 2//V·s。具有9 μ/μ/m RESURF长度的GaN外延层的特征在于，在V/sub GS/=15伏特下的导通电阻为140 μ/μ/cm/sup 2/，并且击穿电压/spl/180伏特归因于穿过AlGaN隔离层的隧穿。
Lateral, accumulation-mode gallium nitride (GaN) MOSFETs were fabricated on a silicon-doped GaN epilayer on a AlGaN isolation layer on a conducting 6H-SiC substrate. The polysilicon gate was formed over a 100 nm silicon dioxide gate dielectric deposited by low-pressure chemical vapor deposition at 900/spl deg/C. The accumulation-layer field-effect mobility is measured to be 110 cm/sup 2//V-s. GaN MOSFETS with a 9 /spl mu/m RESURF length were characterized with an on-resistance of 140 m/spl Omega/-cm/sup 2/ at V/sub GS/=15 Volts and breakdown voltage /spl les/180 Volts attributed to tunneling through the AlGaN isolation layer.