Point defects, diffusion processes, and swirl defect formation in silicon
Point defects, diffusion processes, and swirl defect formation in silicon
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DOI：
10.1007/bf00617863
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发表时间：
1985-05
期刊：
影响因子：
--
通讯作者：
Teh Y. Tan;U. Gösele
中科院分区：
文献类型：
--
作者：
Teh Y. Tan;U. Gösele
本文共分三个部分。在第一部分中，我们回顾了基本的实验和理论结果，形成了我们目前的知识点缺陷和扩散过程中的硅。这些结果一方面涉及氧化效应，其确立了硅中自晶和空位共存，另一方面涉及金向无位错硅中的扩散，其允许确定自间隙对硅自扩散的贡献并估计相应的空位贡献。在第二部分中，我们讨论的主题，其中的理解是刚刚出现在共存的自发光和空缺的框架内：自发光和空缺之间的局部动力学平衡的达成;自发光和空缺和它们各自的扩散率的热平衡浓度的粗略估计，最后，各种可能性，以产生一个不饱和的自发光。在第三部分中，我们从空位和自发光的角度研究了硅中漩涡缺陷的形成。
The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These results concern on one side oxidation effects which established that silicon self-interstitials and vacancies coexist in silicon and on the other side diffusion of gold into dislocation-free silicon which allowed to determine the self-interstitial contribution to silicon self-diffusion and to estimate the corresponding vacancy contribution. In the second part we discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies: reaching of local dynamical equilibrium between self-interstitials and vacancies; rough estimates of the thermal equilibrium concentrations of self-interstitials and vacancies and their respective diffusivities, and finally, various possibilities to generate an undersaturation of self-interstitials. In the third part we examine swirl defect formation in silicon in terms of vacancies and self-interstitials.