Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells
Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells
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DOI：
10.1063/1.3516468
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发表时间：
2010-11-08
影响因子：
4
通讯作者：
Kita, T.
中科院分区：
文献类型：
--
作者：
Hu, W. G.;Inoue, T.;Kita, T.
将吸收系数的影响纳入详细的平衡模型中，以分析量子点 (QD) 太阳能电池中的中带 (IB) 配置。我们的结果表明，最佳 IB 水平 EIB 取决于两个子带隙吸收系数常数 alpha(IC0)/alpha(VI0) 的比率。计算效率等高线图以确定 EIB 和 alpha(IC0)/alpha(VI0) 的最佳值。在许多情况下，大的 alpha(IC0) 会带来高转换效率，特别是对于薄 QD 太阳能电池。优化 QD 形状和尺寸是增加 alpha(IC0) 的一种有前途的方法。增加QD总厚度部分解决了对大α(IC0)的迫切需求。 (C) 2010 年美国物理研究所。 [doi:10.1063/1.3516468]
The effects of absorption coefficients were incorporated in a detailed balance model to analyze the intermediate-band (IB) configuration in quantum dot (QD) solar cells. Our results show that the optimum IB level, EIB, depends on the ratio of two subbandgap absorption coefficient constants, alpha(IC0)/alpha(VI0). Efficiency contour plots have been calculated to determine the optimum values of EIB and alpha(IC0)/alpha(VI0). In many cases, a large alpha(IC0) results in high conversion efficiency, especially for thin QD solar cells. Optimizing QD shape and size is a promising method to increase alpha(IC0). Increasing the QD total thickness partially addresses the urgent demand for a large alpha(IC0). (C) 2010 American Institute of Physics. [doi:10.1063/1.3516468]