Integrating magnetoresistive sensors with microelectromechanical systems for noise reduction
Integrating magnetoresistive sensors with microelectromechanical systems for noise reduction
复制标题
将磁阻传感器与微机电系统集成以降低噪声
DOI：
10.1063/1.4769903
复制
发表时间：
2012-12-03
影响因子：
4
通讯作者：
Luo, Feilu
中科院分区：
文献类型：
--
作者：
Hu, Jiafei;Pan, Mengchun;Luo, Feilu
1/f噪声是磁阻(MR)传感器在低频下的主要检测极限。垂直运动磁通调制(VMFM)与微电子机械系统(MEMS)相结合可以将1/f噪声降低数十倍甚至数百倍，尽管热机械噪声可能像普通的MEMS传感器一样对VMFM传感器的检测能力产生强烈的影响。令人惊讶的是，由热机械噪声引起的电压噪声实际上远远小于MR传感器的噪声基础，这预示着MEMS和MR传感器的集成具有广阔的前景。
1/f noise is the dominant detection limit of magnetoresistive (MR) sensors at low frequency. The vertical motion flux modulation (VMFM) integrating with microelectromechanical systems (MEMS) can reduce 1/f noise by tens or hundreds of times, although thermal-mechanical noise possibly has strong impact on the detection ability of VMFM sensors like common MEMS sensors. Surprisingly, the voltage noise originated from thermal-mechanical noise is actually far less than the noise base of MR sensors, which indicates a great perspective for the integration of MEMS and MR sensors.