An improved MOSFET model for circuit simulation
An improved MOSFET model for circuit simulation
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DOI：
10.1109/16.658823
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发表时间：
1998
影响因子：
3.1
通讯作者：
K. Joardar;K. Gullapalli;C. McAndrew;M. Burnham;A. Wild
中科院分区：
文献类型：
--
作者：
K. Joardar;K. Gullapalli;C. McAndrew;M. Burnham;A. Wild
Problems that have continued to remain in some of the recently published MOSFET compact models are demonstrated in this paper. Of particular interest are discontinuities observed in these models at the boundary between forward and reverse mode operation. A new MOSFET model is presented that overcomes the errors present in state-of-the-art models. Comparison with measured data is also presented to validate the new model.
