Electronic properties of bilayer and multilayer graphene
Electronic properties of bilayer and multilayer graphene
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DOI：
10.1103/physrevb.78.045405
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发表时间：
2008-07-01
影响因子：
3.7
通讯作者：
Peres, N. M. R.
中科院分区：
文献类型：
--
作者：
Nilsson, Johan;Castro Neto, A. H.;Peres, N. M. R.
我们研究了位稀释无序对石墨烯多层膜电子性质的影响，特别是双层和无限堆叠。该模型的简单性允许一个容易的实施的相干势近似和一些分析结果。在这个模型中，我们计算了自能，态密度和谱函数。此外，我们得到的电导率以及直流电导率的频率和温度依赖性。c轴响应是非常规的，因为杂质增加了对足够低的掺杂的响应。我们还研究了偏压石墨烯双层中的杂质问题。
We study the effects of site dilution disorder on the electronic properties in graphene multilayers, in particular the bilayer and the infinite stack. The simplicity of the model allows for an easy implementation of the coherent-potential approximation and some analytical results. Within the model we compute the self-energies, the density of states, and the spectral functions. Moreover, we obtain the frequency and temperature dependence of the conductivity as well as the dc conductivity. The c-axis response is unconventional in the sense that impurities increase the response for low enough doping. We also study the problem of impurities in the biased graphene bilayer.