Effect of dislocations on the electrical and optical properties of long‐wavelength infrared HgCdTe photovoltaic detectors
Effect of dislocations on the electrical and optical properties of long‐wavelength infrared HgCdTe photovoltaic detectors
复制标题
DOI：
10.1116/1.586278
复制
发表时间：
1992-07
影响因子：
1.4
通讯作者：
S. Johnson;D. Rhiger;J. Rosbeck;J. Peterson;S. M. Taylor;M. Boyd
中科院分区：
文献类型：
--
作者：
S. Johnson;D. Rhiger;J. Rosbeck;J. Peterson;S. M. Taylor;M. Boyd
位错对长波红外（LWIR）HgCdTe光伏探测器的电学和光学性质的定量影响是通过故意将位错引入两个高性能阵列的局部区域来确定的，这两个阵列在T=78 K时具有9.5和10.3 μm的截止波长。结果表明，位错会对探测器R 0 A产物产生巨大影响，特别是在温度低于78 K时。对于大的位错密度，R 0A随着位错密度的平方而减小;随着温度的降低，在逐渐降低的位错密度处发生平方依赖性的开始。一个唯象模型的开发，描述了探测器的R 0A产品与位错密度的依赖关系，基于单个和相互作用的位错分流的p-n结的电导。光谱响应和量子效率仅受到微弱影响，泄漏电流的扩散分量也是如此。1/f噪声电流被发现。
The quantitative effects of dislocations on the electrical and optical properties of long‐wavelength infrared (LWIR) HgCdTe photovoltaic detectors was determined by deliberately introducing dislocations into localized regions of two high‐performance arrays having cutoff wavelengths of 9.5 and 10.3 μm at T=78 K. Results show that dislocations can have a dramatic effect on detector R0A product, particularly at temperatures below 78 K. For large dislocation densities, R0A decreases as the square of the dislocation density; the onset of the square dependence occurs at progressively lower dislocation densities as the temperature decreases. A phenomenological model was developed which describes the dependence of the detector R0A product with dislocation density, based on the conductances of individual and interacting dislocations which shunt the p–n junction. Spectral response and quantum efficiency are only weakly affected, as is the diffusion component of the leakage current. The 1/f noise current was found t...