Modification of Shubnikov-de Haas oscillation and quantum Hall effect for Bi2Se3 crystals by Fe
Modification of Shubnikov-de Haas oscillation and quantum Hall effect for Bi2Se3 crystals by Fe
复制标题
Fe 对 Bi2Se3 晶体 Shubnikov-de Haas 振荡和量子霍尔效应的修饰
DOI：
10.1063/5.0001987
复制
发表时间：
2020
影响因子：
3.2
通讯作者：
Zhao Y.
中科院分区：
文献类型：
--
作者：
Zhao T.;Zhao K.;Liu Q. Y.;Yang X. S.;Zhao Y.
Shubnikov-de哈斯（SdH）振荡和量子霍尔效应（QHE）可以解释载流子的量子振荡。我们报道了磁掺杂拓扑绝缘体FexBi_（2-x）Se_3晶体的SdH振荡和QHE，其中晶格常数c随掺杂浓度的增加而减小，但当x大于0.08时，晶格常数c增大.从低温磁电阻数据的Lifshitz-Kosevich公式的拟合，载流子的有效质量和丁格尔温度的样品被提取，并显示出类似的变化趋势的晶格常数。一个恒定的步长为1/R-xy在霍尔测量过程中观察到在低温下意味着二维的类似输运行为与掺杂的Bi 2Se 3样品的层状结构。计算了二维和三维载流子密度，后者与晶格常数的变化趋势相似。一个系统的研究，在所有这些属性的变化与掺杂剂浓度的增加表明，它们是高度相关的。
Shubnikov-de Haas (SdH) oscillations and the quantum Hall effect (QHE) can give insights into quantum oscillations of charge carriers. We report the SdH oscillations and QHE of magnetically doped topological insulator FexBi2-xSe3 crystals, in which the lattice constant c decreases with the increasing dopant concentration but increases when x is greater than 0.08. From the fitting of low-temperature magnetoresistance data to the Lifshitz-Kosevich formula, the effective mass of the carriers and the Dingle temperature of the samples were extracted and show a similar trend of change as the lattice constant. A constant step size of 1/R-xy observed during Hall measurements at low temperatures implies two-dimensional-like transport behavior associated with the layered structure of the doped Bi2Se3 samples. Two-dimensional and three-dimensional charge carrier densities were calculated, and the latter had a similar trend of change as the lattice constant. A systematic study of the changes in all these properties with increasing dopant concentration suggests that they are highly correlated.