Impact ionization enhancements in AlxGa1−xSb avalanche photodiodes
Impact ionization enhancements in AlxGa1−xSb avalanche photodiodes
复制标题
AlxGa1−xSb 雪崩光电二极管中的碰撞电离增强
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
H. Ehrenreich
中科院分区：
文献类型：
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作者：
C. Grein;H. Ehrenreich
几个实验之间的明显的不一致性检查的存在下，增强的空穴对电子的碰撞电离系数比在AlxGa 1 −xSb被证明是与未能认识到，测量在高和低电场导致物理上不同的结果。由于与能隙相等和自旋轨道分裂相关的“共振”带结构效应，该比率仅在低场时表现出增强。这种效果被证明是不重要的，在高场。碰撞电离计算利用现实的赝势能带结构库仑散射矩阵元素。与合金散射的影响被认为是不重要的。
The apparent inconsistency among several experiments examining the presence of an enhanced hole to electron impact ionization coefficient ratio in AlxGa1−xSb is shown to be associated with the failure to recognize that measurements at high and low electric fields lead to physically different results. The ratio exhibits an enhancement only for low fields because of “resonant” band structure effects associated with the equality of the energy gap and the spin orbit splitting. This effect is shown to be unimportant at high fields. The impact ionization calculations utilize realistic pseudopotential band structure Coulomb scattering matrix elements. Effects associated with alloy scattering are found to be unimportant.