Defect reactions associated with divacancy elimination in silicon
Defect reactions associated with divacancy elimination in silicon
复制标题
与硅中双空位消除相关的缺陷反应
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
J. Lindström
中科院分区：
文献类型：
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作者：
V. Markevich;A. Peaker;S. Lastovskii;L. Murin;J. Lindström
通过传统的深能级瞬态光谱和高分辨率拉普拉斯深能级瞬态光谱 (LDLTS)，研究了 n 型直拉 (Cz) 生长和浮区 (FZ) 生长的 Si 晶体中与消除双空位 (V-2) 相关的缺陷反应。通过用 4 MeV 电子照射将双空位引入晶体中。等时退火30分钟后，Cz Si晶体的双空位消失温度范围为225-275℃，FZ Si晶体的双空位消失温度范围为300-350℃。在 Cz Si 晶体中 V-2 消失的同时，观察到两个电子陷阱的相关出现，电子发射的活化能分别为 0.23 eV {E(0.23)} 和 0.47 eV {E(0.47)}。认为Cz Si晶体中V-2消失的主要机制与移动双空位与间隙氧原子的相互作用有关。这种相互作用导致 V2O 中心的形成，这些中心负责 E(0.23) 和 E(0.47) 陷阱。人们发现 V2O 复合物的电子特性与 V-2 的电子特性非常相似，但使用 LDLTS 可以轻松分离这两种缺陷的能级。在 FZ Si 晶体中，一些电子陷阱与 V-2 湮灭同时出现。与退火前的 V-2 浓度相比，这些陷阱的浓度较小，妨碍了它们的可靠识别。 （较少的）
Defect reactions associated with the elimination of divacancies (V-2) have been studied in n-type Czochralski (Cz) grown and float-zone (FZ) grown Si crystals by means of conventional deep-level transient spectroscopy and high-resolution Laplace deep-level transient spectroscopy (LDLTS). Divacancies were introduced into the crystals by irradiation with 4 MeV electrons. Temperature ranges of the divacancy disappearance were found to be 225-275 degreesC in Cz Si crystals and 300-350 degreesC in FZ Si crystals upon 30 min isochronal annealing. Simultaneously with the V-2 disappearance in Cz Si crystals a correlated appearance of two electron traps with activation energies for electron emission 0.23 eV {E(0.23)} and 0.47 eV {E(0.47)} was observed. It is argued that the main mechanism of the V-2 disappearance in Cz Si crystals is related to the interaction of mobile divacancies with interstitial oxygen atoms. This interaction results in the formation Of V2O centres, which are responsible for the E(0.23) and E(0.47) traps. Electronic properties of the V2O complex were found to be very similar to those of V-2 but energy levels of the two defects could easily be separated using LDLTS. In FZ Si crystals, a few electron traps appeared simultaneously with the V-2 annihilation. The small concentration of these traps compared with the V-2 concentration before annealing prevented their reliable identification. (Less)