Magnetization reversal in exchange biased antidot arrays
Magnetization reversal in exchange biased antidot arrays
复制标题
交换偏置抗点阵列中的磁化反转
DOI：
10.1063/1.3056400
复制
发表时间：
2009
影响因子：
3.2
通讯作者：
A. Adeyeye
中科院分区：
文献类型：
--
作者：
D. Tripathy;A. Adeyeye
对深紫外光刻制备的Cu(10nm)∕NiFe(30nm)∕IrMn(tIrMn)∕Cu(2nm)纳米级反点阵列阵列中的交换偏压效应进行了系统研究。将抗点阵列的磁特性与相同成分的连续膜的磁特性进行比较。我们观察到解毒剂表现出更高的矫顽力和交换偏置场。对于反点阵列和连续膜而言，交换偏压场的这种增强以及交换偏压场随 IrMn 层厚度 tIrMn 的相对演变归因于反点横向尺寸减小对 IrMn 域尺寸施加的物理限制。磁阻测量进一步证实了从磁滞回线获得的结果。
A systematic study of the exchange bias effects in arrays of Cu (10nm)∕NiFe (30nm)∕IrMn (tIrMn)∕Cu (2nm) nanoscale antidot arrays prepared by deep ultraviolet lithography is presented. The magnetic properties of the antidot arrays are compared to that of a continuous film of identical composition. We observed that the antidots demonstrate higher coercivity and exchange bias fields. This enhancement in the exchange bias field, and the relative evolution of exchange bias field with the IrMn layer thickness tIrMn for both the antidot array and the continuous film, is attributed to the physical limitations imposed on the IrMn domain size by the reduced lateral dimensions of the antidots. Magnetoresistance measurements further corroborate the results obtained from the hysteresis loops.