Photoconductors for 200–400 μm: Choices and challenges
Photoconductors for 200–400 μm: Choices and challenges
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DOI：
10.1016/0168-9002(96)00022-8
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发表时间：
1996-08
影响因子：
1.4
通讯作者：
N. Haegel
中科院分区：
文献类型：
--
作者：
N. Haegel
非本征硅和锗光电导体是最灵敏的远红外辐射探测器。本文综述了目前正在考虑的将非本征光电导体的波长覆盖范围扩展到220 μm以上的各种方案。综述了Ge：Ga阻挡杂质带探测器、GaAs非本征光电导体和GaAs阻挡杂质带探测器的优点、现状和潜在的局限性。
Extrinsic silicon and germanium photoconductors are the most sensitive detectors of far infrared radiation. This paper surveys various options being considered to extend the wavelength coverage of extrinsic photoconductors beyond the current limit of 220 μm. The benefits, current status, and potential limitations of Ge: Ga blocked impurity band detectors, GaAs extrinsic photoconductors and GaAs blocked impurity band detectors are reviewed.