Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires
Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires
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DOI：
10.1109/lpt.2010.2042590
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发表时间：
2010-04
影响因子：
2.6
通讯作者：
R. Horng;H. Hu;M. Chu;Yu-Li Tsai;Y. Tsai;Chen‐Peng Hsu;D. Wuu
中科院分区：
文献类型：
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作者：
R. Horng;H. Hu;M. Chu;Yu-Li Tsai;Y. Tsai;Chen‐Peng Hsu;D. Wuu
我们报告了通过结合图案化蓝宝石衬底（PSS）和薄膜技术来改善倒装芯片（FC）GaN基发光二极管（LED）的器件性能。结果发现，在传统的平面蓝宝石上生长的FC LED在衬底去除和表面粗糙化的薄膜工艺之后表现出仅36.3%的功率增强因子。相比之下，所制造的FC LED上生长的PSS显示出高达62.3%的功率增强因子，而没有任何后处理相比，与原始的传统FC LED的光输出功率。对于具有薄膜工艺的FC LED/PSS样品，可以实现进一步的强度提高至74.4%。
We report on improved device performance of flip-chip (FC) GaN-based light-emitting diodes (LEDs) by combining patterned sapphire substrate (PSS) and thin-film techniques. It was found that an FC LED grown on a conventional planar sapphire exhibits a power enhancement factor of only 36.3% after the thin-film processes of substrate removal and surface roughening. In contrast, the as-fabricated FC LED grown on a PSS showed a power enhancement factor of up to 62.3% without any postprocess as compared with the light output power of an original conventional FC LED. Further intensity improvement to 74.4% could be achieved for the FC LED/PSS sample with the thin-film processes.