Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy
Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy
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通过金属有机气相外延生长的非极性 (11$ ar 2 $0) InGaN 量子点，具有短激子寿命
DOI：
10.1002/pssc.201300525
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Emery R
中科院分区：
文献类型：
--
作者：
Emery R
InGaN quantum dot (QD) structures have been grown by metal organic vapour phase epitaxy (MOVPE) on non‐polar (11‐20) GaN surfaces by employing an anneal step in nitrogen immediately after the growth of the InGaN. Here, we compare the growth of such structures on pseudo‐substrates grown using an epitaxial lateral overgrowth (ELOG) technique and on pseudo‐substrates grown using a simplerin situSiNxinterlayer. The less complex defect reduction approach results in a significantly higher defect density, but does not detrimentally effect the QD formation. For both types of pseudo‐substrate, sharp peaks with resolution limited widths are observed in both cathodoluminescence at 9 K and micro‐photoluminescence at 4.2 K. The QDs demonstrate significantly reduced exciton lifetimes compared to structures grown on c‐plane, which has advantages for possible applications in single photon sources. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
