Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
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DOI：
10.1109/ted.2014.2371065
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发表时间：
2015
影响因子：
3.1
通讯作者：
Daniel Haehnel;I. Fischer;A. Hornung;Ann-Christin Koellner;J. Schulze
中科院分区：
文献类型：
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作者：
Daniel Haehnel;I. Fischer;A. Hornung;Ann-Christin Koellner;J. Schulze
本文介绍了实现p沟道模式Ge（Sn）异质结带-带隧穿场效应晶体管的实验结果。我们调查的三个设备参数（漏极掺杂，沟道长度，在源极侧的隧道势垒高度）的半导体器件上的设备性能的影响。我们通过系统地将p型漏极掺杂从1·1020 cm-3降低到2 · 1017 cm-3，实现了在p型工作条件下对n沟道模式的完全抑制，在样品系列A中进行了检查。在第二个样品系列B中，我们研究了沟道长度减小到15 nm对晶体管性能的影响。为了提高导通电流ION而不降低截止电流IOFF，我们在第三样品系列C中的源极/沟道结处引入了10 nm的Ge 1-xSnx合金δ层。与没有GeSn δ层的参考样品相比，我们证明了改善的ON电流ION。
We present experimental results on the realization of p-channel mode Ge(Sn) heterojunction band-to-band tunneling field effect transistors. We investigate the influence of three device parameters (drain doping, channel length, and tunnel barrier height at source side) of the semiconductor body of the devices on the device performance. We achieve a complete suppression of the n-channel mode in p-type operating conditions by systematically reducing the p-type drain doping from 1·1020 to 2 · 1017 cm-3, examined in sample series A. In the second sample series B, we investigate the influence of a reduction of the channel length down to 15 nm on transistor performance. To improve the ON current ION without degrading the OFF current IOFF, we introduce a 10-nm delta layer of a Ge1-xSnx alloy at the source/channel junction in the third sample series C. We demonstrate an improved ON current ION compared with the reference sample without a GeSn delta layer.