Nonvolatile memory and programmable logic from molecule-gated nanowires
Nonvolatile memory and programmable logic from molecule-gated nanowires
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DOI：
10.1021/nl025532n
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发表时间：
2002-05-01
期刊：
影响因子：
10.8
通讯作者：
Lieber, CM
中科院分区：
文献类型：
--
作者：
Duan, XF;Huang, Y;Lieber, CM
双稳态纳米开关已组装使用纳米线和氧化还原活性分子作为积木。纳米器件由用氧化还原活性分子官能化的纳米线场效应晶体管（NW-FET）组成，其中氧化还原物质可以存储电荷，从而分别将NW-FET保持在具有高或低沟道电导的逻辑开或关状态。单NW和交叉NW-FET器件已经组装，并显示为两端子和三端子器件的可逆开关。开/关比超过104和保留时间超过20分钟的个别NW设备，和集成阵列中的设备是独立可寻址的，已经组装。分子门控NW-FET器件的特性表明，它们可以作为一系列纳米电子应用的关键元件，包括非易失性存储器和可编程逻辑阵列。
Bistable nanoscale switches have been assembled using nanowires and redox active molecules as building blocks. The nanodevices consist of nanowire field-effect transistors (NW-FET) functionalized with redox active molecules, where the redox species can store charges and thereby maintain the NW-FETs in either a logic on or off state with high or low channel conductance, respectively. Single NW and crossed NW-FET devices have been assembled and shown to switch reversibly as two- and three-terminal devices. Individual NW devices with on/off ratios exceeding 104 and retention times in excess of 20 min, and integrated arrays in which devices are independently addressable, have been assembled. The characteristics of the molecule-gated NW-FET devices suggest that they could serve as key elements in a range of nanoelectronics applications, including nonvolatile memory and programmable logic array.