EUV mask cleaning by dry and wet processes
EUV mask cleaning by dry and wet processes
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通过干法和湿法工艺清洗 EUV 掩模
DOI：
10.1117/12.438368
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
Y. Sugie
中科院分区：
文献类型：
--
作者：
H. Nii;H. Kinoshita;Takeo Watanabe;Y. Matsuo;Y. Sugie
在目前的ULSI清洗工艺中，通常通过臭氧（O3）干法灰化与食人鱼清洗的湿法工艺的组合来剥离光致抗蚀剂。讨论了干法和湿法两种工艺下极紫外光刻掩模清洗工艺的影响。在通过O3的干灰化中，测试虚拟EUVL掩模粘附的有机污染物。在使用通过O3的干灰化去除污染之后，掩模的表面粗糙度从-0.54nm（rms）降低到0.42nm（rms）。此外，m掩模的周期性结构被确认。通过O3的干灰化对于去除EUVL掩模的污染是有效的。在湿法工艺中，对Mo/Si多层膜采用了食人鱼清洗和典型的RCA湿法清洗。Mo/Si多层膜经Piranha和RCA清洗后，除FH溶液长时间浸泡外，膜的周期结构没有发生变化。我们证实了Mo/Si多层膜对Piranha和RCA清洗具有足够的耐受性。
In the present ULSI cleaning processes, a photoresist is usually stripped by a combination of dry ashing by ozone (O3) with wet process of the piranha cleaning. The effects of cleaning process of the mask for the extreme ultraviolet lithography (EUVL) are discussed in these dry and wet processes. In dry ashing by O3, the virtual EUVL mask adhered organic contamination is tested. After removing the contamination using a dry ashing by O3, the surface roughness of the mask is decreased from -.54 nm (rms) to 0.42 nm (rms). Also, the periodic structure of the m ask is confirmed. The dry ashing by O3 is effective for removing a contamination of EUVL mask. In wet process, the piranha cleaning and typical RCA wet cleaning are employed at Mo/Si multilayer. The periodic structure of Mo/Si multilayer did not change after Piranha and RCA cleaning except FH solution in dipping long time. We confirmed the Mo/Si multilayer have enough tolerance to the Piranha and RCA cleaning.